Silicon Z-Diodes

1N746A...1N759A

Features

Very sharp reverse characteristic
Very high stability
Low reverse current level
VZ-tolerance ± 5%

Applications

Voltage stabilization

Absolute Maximum Ratings

Parameter	Test Conditions	Type	Symbol	Value	Unit
Power dissipation	TL<=75°C		PV	500	mW
Z-current			IZ	PV/VZ	mA
Junction temperature			Tj	200	°C
Storage temperature range			Tstg	-65...+200	°C

Maximum Thermal Resistance

Parameter	Test Conditions	Symbol	Value	Unit
Junction ambient	l=9.5mm (3/8"), TL=constant	RthJA	300	K/W

Characteristics

Parameter	Test Conditions	Type	Symbol	Min	Typ	Max	Unit
Forward voltage	IF=200mA		VF			1.1	V